Home >

news Help

Patent Information


Title
窒化銅半導体およびその製造方法 
Author
Kosuke, HIDEO HOSONO, Fumiyasu Oba, Yu Kumagai, Kou Harada, Hideya Kumomi.  
Kind
Patent 
Status
Registered 
Applicant
国立大学法人東京工業大学.  
Filing Date
2017/03/06
Application Number
特願2017-041774
Unexamined Application Date
2018/09/20
Publication Number
特開2018-148031
Registration Date
2021/09/29
Registration Number
特許第6951734号

©2007 Tokyo Institute of Technology All rights reserved.