Author,Title,Kind,Status,ApplicantName,ApplicationDate,ApplicationNumber,PublicationDate,PublicationNumber,RegistrationDate,RegistrationNumber
"HIDEO HOSONO,Masaaki Kitano,Hironobu Sugiyama,Toshiharu Yokoyama,Junghwan Kim","水素化触媒","Patent","Published","国立大学法人東京工業大学, AGC株式会社","2022/12/20","特願2022-203117","2023/08/08","特開2023-109700",,
"Masaaki Kitano,HIDEO HOSONO,Toshiharu Yokoyama,Kiya Ogasawara,Kazuki Miyashita","酸窒化物を触媒担体とするアンモニア分解触媒","Patent","Published","国立大学法人東京工業大学","2022/10/06","特願2022-161673","2024/04/18","特開2024-055069",,
"HIDEO HOSONO,Junghwan Kim","放射線検出素子、放射線検出デバイス及び放射線像撮像装置","Patent","Published","国立大学法人東京工業大学, 三菱ケミカル株式会社","2022/08/01","特願2022-122824","2024/02/14","特開2024-019991",,
"Takayoshi Katase,TOSHIO KAMIYA,HIDEO HOSONO","アルカリ土類金属酸化物の半導体膜、半導体デバイス、及び半導体膜の作製方法","Patent","Published","国立大学法人東京工業大学","2022/01/21","特願2022-008130","2023/08/02","特開2023-107040",,
"Takayoshi Katase,TOSHIO KAMIYA,HIDEO HOSONO","カルコゲナイド薄膜、及び熱電変換素子","Patent","Published","国立大学法人東京工業大学","2021/08/31","特願2021-141736","2023/03/13","特開2023-035115",,
"HIDEO HOSONO,Masaaki Kitano,Masayoshi Miyazaki,jiang li,Toshiharu Yokoyama","酸化的カルボニル化反応用触媒","Patent","Published","国立大学法人東京工業大学","2021/08/13","特願2021-131945","2023/02/24","特開2023-026190",,
"Takayoshi Katase,Takafumi Yamamoto,TOSHIO KAMIYA,HIDEO HOSONO","水素置換酸化物バルク焼結体の製造方法、水素置換酸化物バルク焼結体、及び熱電変換素子","Patent","Published","国立大学法人東京工業大学","2021/01/26","特願2021-010569","2022/08/05","特開2022-114315",,
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,Toshiharu Yokoyama,Toru Numaguchi","有機化合物又は微生物の製造システム及び製造方法","Patent","Registered","国立大学法人東京工業大学, 味の素株式会社","2020/11/19","特願2020-192494","2021/02/25","特開2021-027837","特許第7496993号","2024/05/31"
"MICHIKAZU HARA,HIDEO HOSONO,Masashi Hattori","アンモニア合成用触媒及び該触媒を用いるアンモニアの合成方法","Patent","Published","国立大学法人東京工業大学","2020/10/26","特願2020-179192","2022/05/12","特開2022-070143",,
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,Toshiharu Yokoyama,Toru Numaguchi","含窒素製品及び発酵・培養生産物から選択される製品の製造システム及び製造方法","Patent","Registered","国立大学法人東京工業大学, 味の素株式会社","2020/06/24","特願2020-108847","2020/10/08","特開2020-164417","特許第6991444号","2021/12/10"
"HIDEO HOSONO,Masaaki Kitano,Toshiharu Yokoyama","成形焼結体および成形焼結体の製造方法","Patent","Published","国立大学法人東京工業大学, つばめBHB株式会社","2020/02/26","特願2020-030140","2020/09/03","特開2020-138902",,
"HIDEO HOSONO,Masaaki Kitano,Toshiharu Yokoyama","成形焼結体および成形焼結体の製造方法","Patent","Published","国立大学法人東京工業大学, つばめBHB株式会社","2020/02/26","特願2021-502301","2021/12/23","再表2020/175519",,
"HIDEO HOSONO,Junghwan Kim,Hideya Kumomi","光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法","Patent","Registered","国立大学法人東京工業大学","2019/06/14","特願2020-528761","2021/09/24","再表2020/008839","特許第7181641号","2022/11/22"
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,Toshiharu Yokoyama,yasunori inoue,Shinji Kanbara","担持金属触媒","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2019/02/20","特願2019-028931","2019/05/23","特開2019-076904","特許第6680919号","2020/03/24"
"HIDEO HOSONO,Masaaki Kitano,Toshiharu Yokoyama","複合物、触媒及びアンモニアの製造方法","Patent","Registered","国立大学法人東京工業大学, つばめBHB株式会社","2019/02/04","特願2019-570737","2019/08/15","WO 2019/156029","特許第7410507号","2023/12/26"
"HIDEO HOSONO,Masaaki Kitano,Toshiharu Yokoyama","複合物、複合物の製造方法、触媒及びアンモニアの製造方法","Patent","Published","国立大学法人東京工業大学, つばめBHB株式会社","2019/02/04","特願2019-570736","2021/01/28","再表2019/156028",,
"HIDEO HOSONO,Junghwan Kim,Joonho Bang,Hideya Kumomi","半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット","Patent","Published","国立大学法人東京工業大学, AGC株式会社","2018/10/30","特願2019-557079","2020/12/17","再表2019/107046",,
"HIDEO HOSONO,Junghwan Kim","化合物半導体の量子ドットを含む膜","Patent","Registered","国立大学法人東京工業大学, AGC株式会社","2018/08/17","特願2018-153628","2019/03/14","特開2019-041104","特許第7073981号","2022/05/16"
"HIDEO HOSONO,Yutong Gong,Jiazhen Wu,Masaaki Kitano,Toshiharu Yokoyama,Yangfan Lu,Ye Tiannan","金属間化合物、水素吸放出材料、触媒及びアンモニアの製造方法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2018/07/12","特願2019-529774","2020/05/07","特開2019-013272","特許第7090253号","2022/06/16"
"HIDEO HOSONO,Masaaki Kitano,Toshiharu Yokoyama","金属担持物、担持金属触媒、アンモニアの製造方法、水素の製造方法及びシアナミド化合物の製造方法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2018/03/16","特願2019-506317","2020/01/23","特開(再)2018-169076","特許第7231157号","2023/02/20"
"HIDEO HOSONO,Satoru Matsuishi","蛍光体","Patent","Registered","国立大学法人東京工業大学, 株式会社小糸製作所, 国立大学法人東海国立大学機構","2018/02/07","特願2019-502839","2019/12/26","再表2018/159244","特許第7141047号","2022/09/13"
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,Masashi Hattori,Toshiharu Yokoyama","アンモニア合成用触媒及び該触媒を用いるアンモニア合成法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2018/01/24","特願2018-010079","2019/08/01","特開2019-126776","特許第7023457号","2022/02/14"
"HIDEO HOSONO,Masahiro Miyauchi","二次元ホウ化水素含有シート、二次元ホウ素化合物含有シートの製造方法","Patent","Registered","国立大学法人東京工業大学, 国立大学法人筑波大学","2017/10/18","特願2018-546383","2019/08/29","再表2018/074518","特許第7057569号","2022/04/12"
"HIDEO HOSONO","負イオン源","Patent","Published","国立大学法人東京工業大学, 学校法人同志社（同志社大学）, 大学共同利用機関法人自然科学研究機構, AGC株式会社","2017/10/16","特願2017-200259","2019/05/16","特開2019-075264",,
"HIDEO HOSONO,Hideya Kumomi","半導体素子","Patent","Published","国立大学法人東京工業大学, AGC株式会社","2017/09/29","特願2018-543876","2019/07/18","特開(再)2018-066483",,
"HIDEO HOSONO,Masaaki Kitano,Toshiharu Yokoyama,jiang li","アンモニア合成用触媒の製造方法及びアンモニアの製造方法","Patent","Registered","国立大学法人東京工業大学, つばめBHB株式会社","2017/08/08","特願2018-533492","2019/04/18","再表2018/030394","特許第6675619号","2020/03/13"
"HIDEO HOSONO,Toshiharu Yokoyama,yoshitake toda","エレクトライド化マイエナイト型化合物の製造方法","Patent","Registered","国立大学法人東京工業大学, 国立大学法人弘前大学","2017/07/25","特願2018-529899","2019/06/13","再表2018-021282","特許第6966086号","2021/10/25"
"HIDEO HOSONO,Junghwan Kim","有機ＥＬ素子","Patent","Published","国立大学法人東京工業大学, AGC株式会社, 株式会社カネカ","2017/05/19","特願2017-100081","2018/12/06","特開2018-195512",,
"Kosuke,HIDEO HOSONO,Fumiyasu Oba,Yu Kumagai,Kou Harada,Hideya Kumomi","窒化銅半導体およびその製造方法","Patent","Registered","国立大学法人東京工業大学","2017/03/06","特願2017-041774","2018/09/20","特開2018-148031","特許第6951734号","2021/09/29"
"HIDEO HOSONO,Hanna Taku,hidenori hiramatsu","高感度昇温脱離ガス分析装置","Patent","Registered","国立大学法人東京工業大学","2017/02/27","特願2017-034677","2018/09/13","特開2018-141657","特許第6934239号","2021/08/25"
"HIDEO HOSONO,TOSHIO KAMIYA,Hideya Kumomi,Junghwan Kim","酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体","Patent","Registered","国立大学法人東京工業大学, AGC株式会社","2017/02/23","特願2018-503092","2019/01/10","再表2017/150351","特許第7130209号","2022/08/26"
"HIDEO HOSONO,Masaaki Kitano,Tomofumi Tada,Toshiharu Yokoyama,yoshitake toda,Yangfan Lu,jiang li","遷移金属担持金属間化合物、担持金属触媒、及びアンモニアの製造方法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2016/12/22","特願2017-558267","2018/10/11","再表2017/111028","特許第6890788号","2021/05/28"
"HIDEO HOSONO,Hideya Kumomi","光電変換素子を製造する方法","Patent","Published","国立大学法人東京工業大学, AGC株式会社","2016/11/21","特願2017-553783","2018/09/13","再表2017/094547",,
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,Hiroshi Mizoguchi,Toshiharu Yokoyama,Kyousuke Yamagata","金属担持物、担持金属触媒及び該触媒を用いるアンモニア合成法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2016/11/09","特願2017-550340","2018/10/04","再表2017/082265","特許第6802544号","2020/12/01"
"HIDEO HOSONO,Toshiharu Yokoyama,Masaaki Kitano,Hiroshi Mizoguchi,takaya ogawa","ラーベス相金属間化合物、金属間化合物を用いた触媒、及びアンモニア製造方法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2016/09/15","特願2017-539977","2018/08/09","再表2017/047709","特許第6737455号","2020/07/20"
"HIDEO HOSONO,Satoru Matsuishi","蛍光体","Patent","Registered","国立大学法人東京工業大学, 株式会社小糸製作所, 国立大学法人東海国立大学機構","2016/08/10","特願2016-158097","2017/03/02","特開2017-043764","特許第6856890号","2021/03/23"
"HIDEO HOSONO,Toshiharu Yokoyama,yoshitake toda","エレクトライド化マイエナイト化合物の製造方法、水素製造方法、一酸化炭素製造方法、水素製造システム、一酸化炭素製造システム","Patent","Published","国立大学法人東京工業大学, 国立大学法人福井大学","2016/07/25","特願2016-145752","2018/02/01","特開2018-016500",,
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,Toshiharu Yokoyama,Toru Numaguchi","有機化合物又は微生物の製造システム及び製造方法","Patent","Registered","国立大学法人東京工業大学, 味の素株式会社","2016/02/17","特願2017-500721","2018/01/11","再表2016/133134","特許第6798976号","2020/11/24"
"Kosuke,Tomofumi Susaki,HIDEO HOSONO,Akihiro Maeda","窒化銅半導体およびその製造方法","Patent","Registered","国立大学法人東京工業大学","2016/01/29","特願2016-015961","2017/08/03","特開2017-135329","特許第6712798号","2020/06/04"
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,Toshiharu Yokoyama,yasunori inoue","複合体、複合体の製造方法、アンモニア合成触媒及びアンモニア合成方法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2015/12/04","特願2016-562708","2017/10/05","再表2016/088896","特許第6670754号","2020/03/04"
"HIDEO HOSONO","二次元ホウ素シートおよびその製造方法","Patent","Published","国立大学法人東京工業大学, 国立大学法人筑波大学","2015/11/06","特願2015-218914","2016/10/27","特開2016-185899",,
"HIDEO HOSONO,yoshitake toda","金属酸化物の薄膜、該薄膜を備えた有機エレクトロルミネッセンス素子、太陽電池、および薄膜の製造方法","Patent","Published","国立大学法人東京工業大学, 旭硝子株式会社, 国立研究開発法人科学技術振興機構","2015/09/16","特願2016-548919","2017/07/06","再表2016/043234",,
"HIDEO HOSONO,yoshitake toda","発光素子、表示装置および照明装置","Patent","Registered","国立大学法人東京工業大学, AGC株式会社, 国立研究開発法人科学技術振興機構","2015/09/16","特願2016-548916","2017/07/06","再表2016/043231","特許第6542243号","2019/06/21"
"HIDEO HOSONO,yoshitake toda","シリコン系薄膜半導体装置、およびシリコン系薄膜半導体装置の製造方法","Patent","Registered","国立大学法人東京工業大学, AGC株式会社, エルジー ディスプレイ カンパニー リミテッド(LG Display Co. Ltd.)","2015/02/25","特願2015-035534","2016/09/01","特開2016-157856","特許第6517535号","2019/04/26"
"Satoru Matsuishi,HIDEO HOSONO,Hideya Kumomi","遍歴電子反強磁性体およびその製造法","Patent","Published","国立大学法人東京工業大学","2015/02/16","特願2015-027978","2016/08/22","特開2016-150861",,
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,Toshiharu Yokoyama,yasunori inoue,Shinji Kanbara","担持金属触媒及び該触媒を用いるアンモニア合成法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2015/02/12","特願2016-505140","2017/03/30","再表2015/129471","特許第6487415号","2019/03/01"
"HIDEO HOSONO,FUMITAKA HAYASHI,Toshiharu Yokoyama,Masaaki Kitano","イミドアニオン含有マイエナイト型化合物及びその製造法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2015/02/12","特願2016-506402","2017/04/06","再表2015/133240","特許第6536834号","2019/06/14"
"HIDEO HOSONO,yoshitake toda","金属酸化物の薄膜、該薄膜を備えた有機エレクトロルミネッセンス素子、太陽電池、および有機太陽電池","Patent","Registered","国立大学法人東京工業大学, AGC株式会社, 国立研究開発法人科学技術振興機構","2014/12/04","特願2015-554710","2017/03/23","再表2015/098458","特許第6493920号","2019/03/15"
"HIDEO HOSONO","鉄系超電導物質及びその製造方法","Patent","Registered","国立大学法人東京工業大学, 国立大学法人岡山大学, 国立大学法人名古屋大学","2014/08/29","特願2015-539039","2017/03/09","再表2015/045733","特許第6403123号","2018/09/21"
"Kosuke,Tomofumi Susaki,HIDEO HOSONO","Ｐ型窒化銅半導体薄膜","Patent","Published","国立大学法人東京工業大学","2014/06/24","特願2014-129607","2016/01/18","特開2016-008324",,
"HIDEO HOSONO,FUMITAKA HAYASHI,Toshiharu Yokoyama,MICHIKAZU HARA,Masaaki Kitano,yoshitake toda","水素生成触媒及び水素の製造法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2013/08/20","特願2014-536695","2016/08/18","再表2014/045780","特許第6143761号","2017/05/19"
"HIDEO HOSONO,MICHIKAZU HARA,yasunori inoue,Masaaki Kitano,FUMITAKA HAYASHI,Toshiharu Yokoyama,Satoru Matsuishi,yoshitake toda","導電性マイエナイト型化合物粉末の製造方法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2013/08/20","特願2014-532935","2016/08/08","再表2014/034473","特許第6152381号","2017/06/02"
"HIDEO HOSONO,Katsumi Abe","半導体膜、薄膜トランジスタ、およびこれらの製造方法","Patent","Published","国立大学法人東京工業大学, 旭硝子株式会社","2013/08/16","特願2013-169063","2015/02/23","特開2015-037164",,
"Setsuro Ito,HIDEO HOSONO,KATSURO HAYASHI,yoshitake toda","Ｃ１２Ａ７エレクトライドの薄膜の製造方法、およびＣ１２Ａ７エレクトライドの薄膜","Patent","Registered","国立大学法人東京工業大学, 旭硝子株式会社, 国立研究開発法人科学技術振興機構","2013/06/19","特願2014-521490","2016/05/26","再表2013/191210","特許第6198276号","2017/09/01"
"Setsuro Ito,HIDEO HOSONO,yoshitake toda","有機エレクトロルミネッセンス素子","Patent","Registered","国立大学法人東京工業大学, 旭硝子株式会社, 国立研究開発法人科学技術振興機構","2013/06/19","特願2014-521492","2016/05/26","再表2013/191212","特許第6284157号","2018/02/09"
"HIDEO HOSONO","成膜装置","Patent","Published","国立大学法人東京工業大学, 公益財団法人国際超電導産業技術研究センター","2013/05/30","特願2013-114584","2014/12/15","特開2014-234519",,
"HIDEO HOSONO","鉄系超電導材料、及びこれからなる鉄系超電導層、鉄系超電導テープ線材、鉄系超電導線材","Patent","Registered","国立大学法人東京工業大学, 公益財団法人国際超電導産業技術研究センター(ISTEC)","2013/05/24","特願2013-110254","2014/12/08","特開2014-227329","特許第5757587号","2015/06/12"
"HIDEO HOSONO,unknown unknown,Satoru Matsuishi,Hiroshi Mizoguchi,Satoru Fujitsu","超伝導化合物とその製造方法","Patent","Registered","国立大学法人東京工業大学","2012/10/05","特願2012-223283","2014/04/24","特開2014-073948","特許第5664981号","2014/12/19"
"KATSURO HAYASHI,HIDEO HOSONO","マイエナイト複合材および電子放出用陰極","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2012/09/11","特願2012-199624","2014/03/27","特開2014-055313","特許第6062192号","2016/12/22"
"HIDEO HOSONO,sonun kimu,yoshitake toda,Satoru Matsuishi","窒化物エレクトライド及びその製法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2012/07/26","特願2012-166325","2014/02/06","特開2014-024712","特許第5884101号","2016/02/19"
"HIDEO HOSONO","水素化物イオンを含有するペロブスカイト型酸化物とその製造方法","Patent","Published","国立大学法人東京工業大学, 国立大学法人京都大学","2012/07/05","特願2013-523910","2015/02/23","特開（再表）2013/008705",,
"HIDEO HOSONO,Kenji Nomura,TOSHIO KAMIYA","アモルファス酸化物半導体を活性層とした薄膜トランジスタ構造とその製造方法","Patent","Registered","国立大学法人東京工業大学","2012/07/03","特願2012-149286","2014/01/20","特開2014-011425","特許第5946130号","2016/06/10"
"HIDEO HOSONO,TOSHIO KAMIYA,Kenji Nomura","非晶質酸化物、及び電界効果型トランジスタ","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2012/07/02","特願2012-148444","2012/12/13","特開2012-248853","特許第5589030号","2014/08/01"
"HIDEO HOSONO,TOSHIO KAMIYA,Kenji Nomura","非晶質酸化物を利用した半導体デバイス","Patent","Published","国立大学法人東京工業大学","2012/06/15","特願2012-135638","2012/11/22","特開2012-231153",,
"HIDEO HOSONO,TOSHIO KAMIYA","センサ及び非平面撮像装置","Patent","Published","国立大学法人東京工業大学, キヤノン株式会社","2012/03/22","特願2012-065329","2012/07/26","特開2012-142600",,
"HIDEO HOSONO,Kenji Nomura,TOSHIO KAMIYA","電界効果型トランジスタの製造方法
","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2012/03/15","特願2012-058252","2012/08/30","特開2012-164986","特許第5401572号","2013/11/01"
"HIDEO HOSONO,TOSHIO KAMIYA","酸化物膜を用いた薄膜トランジスタの製造方法","Patent","Published","国立大学法人東京工業大学, キヤノン株式会社","2012/03/15","特願2012-058163","2012/06/28","特開2012-124532",,
"HIDEO HOSONO,Kenji Nomura,TOSHIO KAMIYA","電界効果型トランジスタの製造方法","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2012/03/15","特願2012-058163","2012/06/28","特開2012-124532","特許第5401571号","2013/11/01"
"HIDEO HOSONO,Kenji Nomura,TOSHIO KAMIYA","電界効果型トランジスタの製造方法
","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2012/03/15","特願2012-058253","2012/08/30","特開2012-164987","特許第5401573号","2013/11/01"
"HIDEO HOSONO,Kenji Nomura,TOSHIO KAMIYA","電界効果型トランジスタの製造方法
","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2012/03/15","特願2012-058087","2012/08/23","特開2012-160740","特許第5451801号","2014/01/10"
"HIDEO HOSONO,TOSHIO KAMIYA,Kenji Nomura","画像表示装置","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2012/03/09","特願2012-053401","2012/08/09","特開2012-151485","特許第5401570号","2013/11/01"
"HIDEO HOSONO","鉄系超電導体のウィスカー結晶とその製造方法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人 物質・材料研究機構","2012/02/10","特願2012-027737","2013/08/22","特開2013-163615","特許第5916009号","2016/04/15"
"HIDEO HOSONO,MICHIKAZU HARA,Masaaki Kitano,sonun kimu,Satoru Matsuishi,Toshiharu Yokoyama,FUMITAKA HAYASHI,yoshitake toda","アンモニア合成触媒及びアンモニア合成方法","Patent","Registered","国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構","2011/12/06","特願2012-547860","2014/05/22","特開（再表）2012/077658","特許第5820817号","2015/10/09"
"HIDEO HOSONO,Kenji Nomura","表示装置とその製造方法","Patent","Published","国立大学法人東京工業大学, 旭硝子株式会社","2011/11/01","特願2011-240461","2013/05/20","特開2013-097195",,
"TOSHIO KAMIYA,HIDEO HOSONO","薄膜トランジスタ、及びそれを用いた最大印加電圧検出センサ及び照射光履歴センサ","Patent","Published","国立大学法人東京工業大学, 学校法人龍谷大学","2011/09/13","特願2011-200040","2013/04/04","特開2013-062384",,
"HIDEO HOSONO,sonun kimu,yoshitake toda","電気伝導性を有するC12A7系酸化物融液又はガラス材料及びそれらの製造方法","Patent","Registered","国立大学法人東京工業大学","2011/08/19","特願2011-179866","2013/02/28","特開2013-040088","特許第5681062号","2015/01/16"
"Tomofumi Susaki,HIDEO HOSONO","電子放出源","Patent","Registered","国立大学法人東京工業大学","2011/08/05","特願2011-172319","2013/02/21","特開2013-037855","特許第5742055号","2015/05/15"
"HIDEO HOSONO,TOSHIO KAMIYA","非晶質酸化物、及び電界効果型トランジスタ","Patent","Published","国立大学法人東京工業大学, キヤノン株式会社","2011/07/15","特願2011-156724","2011/12/22","特開2011-256108",,
"HIDEO HOSONO,TOSHIO KAMIYA,Kenji Nomura","非晶質酸化物、及び電界効果型トランジスタ","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2011/07/15","特願2011-156723","2011/12/08","特開2011-249823","特許第5337849号","2013/08/09"
"HIDEO HOSONO,Kenji Nomura,TOSHIO KAMIYA","同時両極性電界効果型トランジスタ及びその製造方法","Patent","Registered","国立大学法人東京工業大学","2011/03/01","特願2011-044517","2012/09/20","特開2012-182329","特許第5735306号","2015/04/24"
"HIDEO HOSONO,HIROYUKI HIRAYAMA,Yoshitake Toda","二酸化炭素の吸着還元剤及び還元方法","Patent","Published","国立大学法人東京工業大学","2010/07/26","特願2010-167366","2012/02/09","特開2012-025636",,
"HIDEO HOSONO,Masahiro Hirano,KATSURO HAYASHI","１２ＣａＯ・７Ａｌ2Ｏ3化合物","Patent","Registered","国立大学法人東京工業大学, 株式会社ファンケル","2010/06/02","特願2011-518473","2012/11/22","特開（再表）2010-143574","特許第5723771号","2015/04/03"
"HIDEO HOSONO,Masahiro Hirano,KATSURO HAYASHI","１２ＣａＯ・７Ａｌ2Ｏ3化合物","Patent","Published","国立大学法人東京工業大学","2010/06/02","特願2011-518473","2012/11/22","特開（再表）2010-143574",,
"HIDEO HOSONO","複合水素透過膜","Patent","Published","国立大学法人東京工業大学, 国立大学法人東北大学","2009/06/04","特願2009-135581","2010/12/16","特開2010-279905",,
"HIDEO HOSONO,Masahiro Hirano","有機化合物の電解還元合成方法","Patent","Registered","国立大学法人東京工業大学, 旭硝子株式会社","2009/05/11","特願2009-114402","2010/11/18","特開2010-261086","特許第5374770号","2013/10/04"
"HIDEO HOSONO,KATSURO HAYASHI","抗酸化剤及び抗酸化化粧料","Patent","Published","国立大学法人東京工業大学, 株式会社ファンケル","2008/11/10","特願2008-287781","2009/07/23","特開2009-161728",,
"HIDEO HOSONO,Masahiro Hirano,KATSURO HAYASHI","抗酸化剤及び抗酸化化粧料","Patent","Registered","国立大学法人東京工業大学, 株式会社ファンケル","2008/11/10","特願2008-287781","2009/07/23","特開2009-161728","特許第5615491号","2014/09/19"
"HIDEO HOSONO","酸素原子発生装置","Patent","Published","国立大学法人東京工業大学","2008/08/28","特願2008-219450","2010/03/11","特開2010-052980",,
"HIDEO HOSONO,Masahiro Hirano","複合酸化物膜および電気伝導性複合化合物膜の製造方法","Patent","Registered","国立大学法人東京工業大学, 旭化成株式会社","2007/10/26","特願2007-279093","2009/05/21","特開2009-107858","特許第5224778号","2013/03/22"
"HIDEO HOSONO,KATSURO HAYASHI,Masahiro Hirano","抗酸化剤","Patent","Registered","国立大学法人東京工業大学, 株式会社ファンケル","2007/10/25","特願2008-553958","2010/05/06","特開（再表）2008/087774","特許第5213122号","2013/03/08"
"HIDEO HOSONO","電気伝導性複合化合物の製造方法","Patent","Published","国立大学法人東京工業大学, 旭化成株式会社","2007/04/25","特願2007-115159","2008/11/06","特開2008-266105",,
"HIDEO HOSONO,KATSURO HAYASHI","活性酸素を含有したオキシアパタイト及びその製造方法","Patent","Published","国立大学法人東京工業大学, 旭化成株式会社","2006/09/05","特願2006-240040","2007/04/12","特開2007-091582",,
"HIDEO HOSONO,KATSURO HAYASHI","活性酸素を含有したオキシアパタイト、その製造方法、及びそれからなる光触媒","Patent","Registered","国立大学法人東京工業大学, 旭化成株式会社","2006/09/05","特願2006-240041","2007/04/12","特開2007-090341","特許第4766685号","2011/06/24"
"HIDEO HOSONO,KATSURO HAYASHI","複合金属酸化物及び導電性複合金属酸化物の製造方法","Patent","Published","国立大学法人東京工業大学, 関西ペイント株式会社","2006/07/05","特願2006-185804","2008/01/24","特開2008-013396",,
"HIDEO HOSONO","導電性マイエナイト型化合物の製造方法","Patent","Registered","国立大学法人東京工業大学, 旭硝子株式会社","2006/05/30","特願2007-519015","2009/01/08","再表2006/129675","特許第4495757号","2010/04/16"
"HIDEO HOSONO","導電性マイエナイト型化合物の製造方法","Patent","Registered","国立大学法人東京工業大学, 旭硝子株式会社","2006/05/30","特願2007-519014","2009/01/08","再表2006/129674","特許第4497484号","2010/04/23"
"HIDEO HOSONO","酸化触媒及びイオン伝導体並びにその製造方法","Patent","Registered","国立大学法人東京工業大学, 日立化成工業株式会社","2005/11/14","特願2005-329076","2007/06/07","特開2007-137684","特許第4806251号","2011/08/19"
"HIDEO HOSONO,TOSHIO KAMIYA","電界効果型トランジスタ","Patent","Published","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325371","2006/06/29","特開2006-173580",,
"HIDEO HOSONO,TOSHIO KAMIYA","画像表示装置","Patent","Published","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325365","2006/06/22","特開2006-165528",,
"HIDEO HOSONO,Kenji Nomura,TOSHIO KAMIYA","電界効果型トランジスタ","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325371","2006/06/29","特開2006-173580","特許第5118812号","2012/10/26"
"HIDEO HOSONO,TOSHIO KAMIYA","発光装置及び表示装置","Patent","Published","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325367","2006/07/13","特開2006-186319",,
"HIDEO HOSONO,TOSHIO KAMIYA,Kenji Nomura","非晶質酸化物を利用した半導体デバイス","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325370","2006/06/22","特開2006-165532","特許第5053537号","2012/08/03"
"HIDEO HOSONO,TOSHIO KAMIYA","非晶質酸化物を利用した半導体デバイス","Patent","Published","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325370","2006/06/22","特開2006-165532",,
"HIDEO HOSONO,TOSHIO KAMIYA","画像表示装置","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325365","2006/06/22","特開2006-165528","特許第5126729号","2012/11/09"
"HIDEO HOSONO,TOSHIO KAMIYA","電界効果型トランジスタ","Patent","Published","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325364","2006/06/22","特開2006-165527",,
"HIDEO HOSONO,TOSHIO KAMIYA,Kenji Nomura","発光装置及び表示装置","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325367","2006/07/13","特開2006-186319","特許第5118811号","2012/10/26"
"HIDEO HOSONO,TOSHIO KAMIYA","電界効果型トランジスタ","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325366","2006/06/22","特開2006-165529","特許第5138163号","2012/11/22"
"HIDEO HOSONO,Kenji Nomura","電界効果型トランジスタの製造方法","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325369","2006/06/22","特開2006-165531","特許第5126730号","2012/11/09"
"HIDEO HOSONO,TOSHIO KAMIYA,Kenji Nomura","電界効果型トランジスタ","Patent","Registered","国立大学法人東京工業大学, キヤノン株式会社","2005/11/09","特願2005-325364","2006/06/22","特開2006-165527","特許第5118810号","2012/10/26"
"yoshinobu aoyagi,HIDEO HOSONO","AｌGaN系深紫外発光素子およびその製造方法","Patent","Published","国立大学法人東京工業大学","2005/03/28","特願2005-093028","2006/10/12","特開2006-278554",,
"HIDEO HOSONO","耐紫外線ガラス","Patent","Registered","財団法人理工学振興会, 株式会社住田光学ガラス","2000/10/02","特願2000-302361","2002/04/16","特開2002-114536","特許第4799726号","2011/08/12"