発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"大友明,相馬拓人,加渡　幹尚　","酸化ガリウム系半導体の製造方法","特許","公開","国立大学法人東京工業大学, トヨタ自動車株式会社","2020/09/17","特願2020-156405","2022/03/30","特開2022-050042",,
"大友明,若林諒,李政洙,加渡　幹尚　","酸化ガリウムの製造方法","特許","登録","国立大学法人東京工業大学, トヨタ自動車株式会社","2019/02/22","特願2019-030421","2020/08/06","特開2020-117430","特許第7176977号","2022/11/14"
"大友明,吉松公平,呉東広平","金属化合物結晶性膜およびその製造方法","特許","登録","国立大学法人東京工業大学","2016/08/05","特願2016-154759","2018/02/08","特開2018-020946","特許第6945215号","2021/09/16"
"吉松公平,大友明","超伝導酸化物薄膜およびその製造方法","特許","公開","国立大学法人東京工業大学","2015/08/19","特願2015-162168","2017/02/23","特開2017-039621",,
"大島孝仁,大友明,佐々木　公平","電気化学反応装置","特許","公開","国立大学法人東京工業大学, 株式会社タムラ製作所","2013/04/16","特願2013-085494","2014/10/30","特開2014-205899",,
"大友明,大島孝仁,藤田　静雄,東脇　正高,佐々木　公平","Ga2O3系HEMT","特許","公開","国立大学法人東京工業大学, 株式会社タムラ製作所, 国立大学法人京都大学, 独立行政法人情報通信研究機構","2012/09/07","特願2013-532669","2015/03/23","特開（再表）2013/035841",,