発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号 "PHAMNAM HAI,白倉孝典,近藤 剛 ","スピン注入源、磁気メモリ、スピンホール発振器、計算機、及び磁気センサ","特許","公開","国立大学法人東京工業大学, キオクシア株式会社","2021/08/31","特願2021-141316","2023/03/13","特開2023-034867",, "PHAMNAM HAI,Quang Le ,Cherngye Hwang ,Brian R. York ,Thao A. Nguyen ,Zheng Gao ,Kuok San Ho ","SOT(スピン軌道トルク)MTJ(磁気トンネル接合)デバイス、MAMR(マイクロ波アシスト磁気記録)書き込みヘッド、MRAM(磁気抵抗ランダムアクセスメモリ)デバイス","特許","公開","国立大学法人東京工業大学, Western Digital Technologies, Inc.","2020/12/22","特願2020-212229","2021/09/02","特開2021-128814",, "PHAMNAM HAI,白倉孝典","スピンホール発振器および磁気記録デバイス、計算機","特許","公開","国立大学法人東京工業大学","2020/02/21","PCT/JP2020/007010","2020/09/10","WO 2020/179493",, "PHAMNAM HAI,八尾 健一郎,中野総一郎","磁気抵抗メモリ","特許","公開","国立大学法人東京工業大学","2019/09/26","特願2019-176032","2021/04/08","特開2021-057357",, "PHAMNAM HAI,グエン フィン ズィ カン,白倉孝典","磁気記録デバイス","特許","公開","国立大学法人東京工業大学","2019/08/21","特願2019-151364","2021/03/01","特開2021-034480",, "PHAMNAM HAI,NGUYEN HUYNH DUY KHANG","磁性体とBiSbの積層構造の製造方法、磁気抵抗メモリ、純スピン注入源","特許","登録","国立大学法人東京工業大学","2018/09/14","特願2019-542310","2020/10/15","再表2019-054484","特許第7227614号","2023/02/14" "PHAMNAM HAI,田中 雅明 ,NGUYEN THANH TU ","強磁性半導体、その製造方法およびそれを用いた磁気センサ","特許","公開","国立大学法人東京工業大学, 国立大学法人東京大学","2017/06/01","特願2017-109044","2018/12/27","特開2018-206884",,