発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"星井拓也,筒井一生","ｐチャネルＧａＮＭＯＳデバイス及びその製造方法","特許","公開","国立大学法人東京工業大学","2021/08/25","特願2021-137005","2023/03/09","特開2023-031488",,
"AHMETPARHAT,マイマイティ マイマイティレシャティ,岩井洋,服部健雄,筒井一生,角嶋邦之","半導体素子","特許","公開","国立大学法人東京工業大学","2011/12/27","特願2011-285538","2013/07/08","特開2013-135135",,
"Parhat　AHMET,岩井洋,筒井一生,角嶋邦之,服部　健雄,知京　豊裕","半導体装置及びコンデンサ","特許","公開","国立大学法人東京工業大学, 独立行政法人 物質・材料研究機構","2007/03/06","特願2007-056151","2008/09/18","特開2008-218827",,
"岩井洋,筒井一生,Parhat　AHMET,角嶋邦之,松元　道一,奥野　泰利,久保田　正文,上田　誠二","半導体装置及びその製造方法","特許","公開","国立大学法人東京工業大学, 松下電器産業　株式会社","2006/05/30","特願2006-149763","2007/12/13","特開2007-324187",,
"岩井洋,筒井一生,角嶋　邦之,奥野　泰利,松元　道一,久保田　正文,上田　誠二","半導体装置及びその製造方法","特許","公開","国立大学法人東京工業大学, 松下電器産業　株式会社","2005/12/09","特願2005-355808","2007/06/07","特開2007-142347",,