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Publication Information
Title
Japanese:
GS-MBE法とHW-Cell法を用いた歪Si1-yCy MOSFET特性の比較
English:
Author
Japanese:
金井嵩紘, 石原英恵, 綿引達郎,
山田明
, 小長井誠.
English:
金井嵩紘, 石原英恵, 綿引達郎,
山田明
, 小長井誠.
Language
Japanese
Journal/Book name
Japanese:
2003年秋季第64回応用物理学関係連合講演会
English:
Volume, Number, Page
Vol. 31p-H-13
Published date
2003
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
©2007
Tokyo Institute of Technology All rights reserved.