Ultra-Thin Ge-on-Insulator(GOI) Metal S/D p-Channel MOSFETs Fabricated by Low Temperature MBE Growth

Publication Information

Title

Japanese:
English:	Ultra-Thin Ge-on-Insulator(GOI) Metal S/D p-Channel MOSFETs Fabricated by Low Temperature MBE Growth

Author

Japanese:	T.Uehara, H.Matsubara, S.Sugahara, S.Takagi.
English:	T.Uehara, H.Matsubara, S.Sugahara, S.Takagi.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

pp. paper H-8-2, pp.1050-1051

Published date

2006

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,

Conference site

Japanese:
English: