Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy

Publication Information

Title

Japanese:
English:	Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy

Author

Japanese:	T.Uehara, H.Matsubara, 菅原聡, S.Takagi.
English:	T.Uehara, H.Matsubara, S.Sugahara, S.Takagi.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

Vol. 46 No. 4B pp. 2117-2121

Published date

Apr. 2007

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: