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Publication Information
Title
Japanese:
ひずみSi p-MOSFETにおける反転層正孔移動度のユニバーサリティ
English:
Author
Japanese:
武田浩司, 熊谷寛, 西川昌志,
菅原聡
, 高木信一.
English:
武田浩司, 熊谷寛, 西川昌志,
菅原聡
, 高木信一.
Language
Japanese
Journal/Book name
Japanese:
English:
Volume, Number, Page
pp. 31a-P5-26
Published date
2005
Publisher
Japanese:
English:
Conference name
Japanese:
第52回応用物理学関係連合講演会, さいたま,
English:
Conference site
Japanese:
English:
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Tokyo Institute of Technology All rights reserved.