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Title
Japanese:ひずみSi p-MOSFETにおける反転層正孔移動度のユニバーサリティ 
English: 
Author
Japanese: 武田浩司, 熊谷寛, 西川昌志, 菅原聡, 高木信一.  
English: 武田浩司, 熊谷寛, 西川昌志, 菅原聡, 高木信一.  
Language Japanese 
Journal/Book name
Japanese: 
English: 
Volume, Number, Page         pp. 31a-P5-26
Published date 2005 
Publisher
Japanese: 
English: 
Conference name
Japanese:第52回応用物理学関係連合講演会, さいたま, 
English: 
Conference site
Japanese: 
English: 

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