Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures (invited)

Publication Information

Title

Japanese:
English:	Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures (invited)

Author

Japanese:	宮島晋介, Akira Yamada, Makoto Konagai.
English:	Shinsuke Miyajima, Akira Yamada, Makoto Konagai.

Language

English

Journal/Book name

Japanese:
English:	Mater. Res. Soc. Symp. Proc. 910

Volume, Number, Page

Vol. 910 pp. 0910-A04-01

Published date

Apr. 2006

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2006 MRS spring meeting, April 17 – 21 2006, (Invited, Symposium A, SESSION A4: Growth Techniques and Interface Studies, A4.1)

Conference site

Japanese:
English:	Moscone West, San Francisco Marriott, San Francisco, CA, USA