Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology

Publication Information

Title

Japanese:
English:	Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology

Author

Japanese:	山本修一郎, 菅原聡.
English:	S. Yamamoto, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:	52nd Annual Conf. on Magnetism and Magnetic Materials

Volume, Number, Page

p. 481 paper HP-02

Published date

Nov. 2007

Publisher

Japanese:
English:

Conference name

Japanese:
English:	52nd Annual Conf. on Magnetism and Magnetic Materials

Conference site

Japanese:
English:	Tampa