Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs

Publication Information

Title

Japanese:
English:	Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs

Author

Japanese:	S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, 中根了昌, M. Takenaka, 菅原聡.
English:	S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, R. Nakane, M. Takenaka, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:	34th International Symposium on Compound Semiconductors (ISCS2007)

Volume, Number, Page

p. 132

Published date

Oct. 2007

Publisher

Japanese:
English:

Conference name

Japanese:
English:	4th International Symposium on Compound Semiconductors (ISCS2007)

Conference site

Japanese:
English: