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Title
Japanese: 
English:Nonvolatile SRAM architecture using MOSFET-based spin-transistors 
Author
Japanese: Yusuke Shuto, 山本 修一郎, 菅原 聡.  
English: Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara.  
Language English 
Journal/Book name
Japanese: 
English:J. Appl. Phys. 
Volume, Number, Page Vol. 105        pp. 07C933/1-3
Published date 2009 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
DOI https://doi.org/10.1063/1.3076895
Abstract The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit approach to reproduce the functions of spin transistors, based on recently progressed magnetoresistive random access memory technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell.

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