Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology

Publication Information

Title

Japanese:
English:	Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology

Author

Japanese:	山本修一郎, 菅原聡.
English:	Shuu'ichirou Yamamoto, Satoshi Sugahara.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

Vol. 48 No. 4 pp. 043001-1-7

Published date

Apr. 2009

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: