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Publication Information
Title
Japanese:
English:
Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture
Author
Japanese:
山本 修一郎
,
菅原 聡
.
English:
S. Yamamoto
,
S. Sugahara
.
Language
English
Journal/Book name
Japanese:
English:
Jpn. J. Appl. Phys.
Volume, Number, Page
vol. 48 no. 4 pp. 043001/1-7
Published date
2009
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
©2007
Tokyo Institute of Technology All rights reserved.