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Title
Japanese: 
English:Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors 
Author
Japanese: 高村 陽太, 西島 輝, 長浜 陽平, 中根 了昌, 菅原 聡.  
English: Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane, S. Sugahara.  
Language English 
Journal/Book name
Japanese: 
English:ECS Trans. 
Volume, Number, Page vol. 16    no. 10    pp. 945-952
Published date Oct. 2008 
Publisher
Japanese: 
English:The Electrochemical Society 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
DOI http://dx.doi.org/10.1149/1.2986856
Abstract The paper presents a novel preparation technique for Si- and Gebased half-metallic full-Heusler alloy thin films, utilizing siliconon- insulator (SOI) and germanium-on-insulator (GOI) substrates, respectively. Full-Heusler Co2FeSi (Co2FeGe) alloy thin films were successfully formed by thermally activated silicidation (germanidation) reaction between an ultra-thin SOI (GOI) layer and Co/Fe layers deposited on it. This technique can easily produce fully ordered L21 structure that is necessary for the halfmetallicity of full-Heusler alloys. The proposed technique is compatible with metal source/drain formation process in advanced CMOS technology and would be applicable to the fabrication of the half-metallic source/drain of MOSFET type of spin transistors.

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