Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology

Publication Information

Title

Japanese:
English:	Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology

Author

Japanese:	山本修一郎, 菅原聡.
English:	S. Yamamoto, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

paper CT-04 p. 196

Published date

Nov. 2008

Publisher

Japanese:
English:

Conference name

Japanese:
English:	53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)

Conference site

Japanese:
English:	Austin, USA