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Title
Japanese: 
English:Characterization of Half-Metallic L21-Phase Co2FeSi Full-Heusler Alloy Thin Films Formed by Rapid Thermal Annealing 
Author
Japanese: 高村 陽太, 中根 了昌, 宗片 比呂夫, 菅原 聡.  
English: Y. Takamura, R. Nakane, H. Munekata, S. Sugahara.  
Language English 
Journal/Book name
Japanese: 
English:J. Appl. Phys. 
Volume, Number, Page vol. 103    no. 7    pp. 07D719/1-3
Published date Apr. 2008 
Publisher
Japanese: 
English:American Institute of Physics 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
DOI https://doi.org/10.1063/1.2838648
Abstract The authors developed a preparation technique of Co2FeSi full-Heusler alloy thin films with the L21-ordered structure on silicon-on-insulator SOI substrates, employing rapid thermal annealing RTA. The Co2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI 001 layer and Fe/Co layers deposited on it. The highly 110-oriented L21-phase polycrystalline full-Heusler alloy films were obtained at the RTA temperature of 700 °C. Crystallographic and magnetic properties of the RTA-formed full-Heusler alloy films were qualitatively the same as those of bulk full-Heusler alloy. The proposed technique is compatible with metal source/drain formation process in advanced complementary metal-oxide semiconductor technology and would be applicable to the fabrication of the half-metallic source/ drain of metal-oxide-semiconductor field-effect transistor type of spin transistors.

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