Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs

Publication Information

Title

Japanese:
English:	Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs

Author

Japanese:	高村陽太, 西島輝, 長浜陽平, 中根了昌, 菅原聡.
English:	Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:	The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)

Volume, Number, Page

paper P-19

Published date

Apr. 2008

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)

Conference site

Japanese:
English:	Tokyo, Japan