Fundamental Study of Low-Temperature Epitaxy of Si and SiGe by Photo-Assisted Chemical Vapor Deposition | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Fundamental Study of Low-Temperature Epitaxy of Si and SiGe by Photo-Assisted Chemical Vapor Deposition

Author

Japanese:	山田明.
English:	AKIRA YAMADA.

Type

Type:	Thesis (Ph.D.)
Country:

Language

Organization name

Tokyo Institute of Technology

Report number

Conferred date

1989/--/--

Judge

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