Proceedings of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion
Volume, Number, Page
Vol. 1
pp. 138-141
Published date
May 2006
Publisher
Japanese:
English:
Conference name
Japanese:
English:
IEEE the 4th World Conference on Photovoltaic Energy Conversion
Conference site
Japanese:
English:
Hawaii, USA
Abstract
We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/ silicon rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscope (TEM) measurement revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers.