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Title
Japanese: 
English:Preparation of nanocrystalline silicon in amorphous SiC matrix for Si quantum dots superlattice 
Author
Japanese: 黒川 康良, 宮島 晋介, 山田 明, 小長井 誠.  
English: Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai.  
Language English 
Journal/Book name
Japanese: 
English:Proceedings of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion 
Volume, Number, Page Vol. 1        pp. 138-141
Published date May 2006 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English:IEEE the 4th World Conference on Photovoltaic Energy Conversion 
Conference site
Japanese: 
English:Hawaii, USA 
Abstract We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/ silicon rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscope (TEM) measurement revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers.

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