Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability

Author

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

June 2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2010 Symposium on VLSI Technology

Conference site

Japanese:
English:	Honolulu, USA

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