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Title
Japanese: 
English:Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique 
Author
Japanese: Kim Do Yun, ｲｻﾇﾙ ｱﾌﾃﾞｲ, 笠嶋 俊介, 宮島 晋介, 小長井 誠.  
English: Do Yun Kim, Ihsanul Afdi Yunaz, Shunsuke Kasashima, Shinsuke Miyajima, Makoto Konagai.  
Language English 
Journal/Book name
Japanese: 
English:MRS Proceedings 
Volume, Number, Page Volume 1245       
Published date Apr. 2010 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English:2010 MRS Spring Meeting 
Conference site
Japanese: 
English: 
Official URL http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=26234&DID=323801&action=detail
 
DOI https://doi.org/10.1557/PROC-1245-A07-07
Abstract Optical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (?) were 0.66 V, 0.57, and 6.13%, respectively.

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