Extremely High Peak Current Densities of over 1×10<sup>6</sup> A/cm<sup>2</sup> in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy

Publication Information

Title

Japanese:
English:	Extremely High Peak Current Densities of over 1×10⁶ A/cm² in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy

Author

Japanese:	H. Sugiyama, H. Yokoyama, 寺西豊志, 鈴木左文, 浅田雅洋.
English:	H. Sugiyama, H. Yokoyama, A. Teranishi, S. Suzuki, M. Asada.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

vol. 49 p. 051201

Published date

2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: