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Title
Japanese: 
English:Formation of Co2FeSi/SiOxNy/Si tunnel junctions for Si-based spin transistors 
Author
Japanese: 林 建吾, 高村 陽太, 中根 了昌, 菅原 聡.  
English: K. Hayashi, Y. Takamura, R. Nakane, S. Sugahara.  
Language English 
Journal/Book name
Japanese: 
English:J. Appl. Phys. 
Volume, Number, Page Vol. 107        pp. 09B104/1-3
Published date Apr. 2010 
Publisher
Japanese: 
English:American Institute of Physics. 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
DOI https://doi.org/10.1063/1.3350913
Abstract The authors developed a fabrication technique of Co2FeSi/SiOxNy / Si tunnel junctions, employing rapid thermal annealing RTA. The full-Heusler Co2FeSi CFS alloy thin film was directly formed on the ultrathin SiOxNy barrier layer without a buffer layer by RTA-induced silicidation reaction of a Co/Fe/amorphous-Si multilayer deposited on the barrier layer. The ultrathin SiOxNy layer formed on a Si substrate effectively blocked the diffusion of Co and Fe atoms into the Si substrate, leading to the formation of a high quality tunnel junction. It was found from crystallographic analyses that the CFS film on SiOxNy has a highly 110-oriented texture structure with the L21 ordering and the CFS/SiOxNy interface was atomically flat without intermixing and crystallinity degradation.

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