Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay

Publication Information

Title

Japanese:
English:	Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay

Author

Japanese:	寺西豊志, 静野薫, 鈴木左文, 浅田雅洋, H. Sugiyama, H. Yokoyama.
English:	A. Teranishi, K. Shizuno, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama.

Language

English

Journal/Book name

Japanese:
English:	IEICE Electron. Express

Volume, Number, Page

vol. 9 no. 5 pp. 385-390

Published date

Mar. 10, 2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI