Analysis and Design of Hanle-Effect Spin Transistors at 300 K | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Analysis and Design of Hanle-Effect Spin Transistors at 300 K

Author

Japanese:	高村陽太, 菅原聡.
English:	Y. Takamura, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:	IEEE Magn. Lett.

Volume, Number, Page

Vol. 2 pp. 3000404/1-4

Published date

Oct. 10, 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI

https://doi.org/10.1109/LMAG.2011.2166378

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