Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs

Publication Information

Title

Japanese:
English:	Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs

Author

Japanese:	周藤悠介, 山本修一郎, 菅原聡.
English:	Y. Shuto, S. Yamamoto, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

June 10, 2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2012 IEEE Silicon Nanotechnology Workshop (SNW2012)

Conference site

Japanese:
English:	Honolulu, HI,