Nonvolatile SRAM based on spin-transistor architecture for nonvolatile power-gating systems

Publication Information

Title

Japanese:
English:	Nonvolatile SRAM based on spin-transistor architecture for nonvolatile power-gating systems

Author

Japanese:	周藤悠介, 山本修一郎, 菅原聡.
English:	Y. Shuto, S. Yamamoto, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 4, 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	International Symposium on Advanced Hybrid Nano Devices (IS-AHND): Prospects by World’s Leading Scientists

Conference site

Japanese:
English: