Analysis of the Hanle effect in Si MOS inversion channels at 300K | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Analysis of the Hanle effect in Si MOS inversion channels at 300K

Author

Japanese:	高村陽太, 菅原聡.
English:	Y. Takamura, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

HB-12 pp. 548-529

Published date

Oct. 30, 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	56th Annual Conf. on Magnetism and Magnetic Materials (MMM)

Conference site

Japanese:
English:	Scottsdale, AZ

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