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Title
Japanese: 
English:Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing 
Author
Japanese: 高村 陽太, 櫻井 卓也, 中根了昌, 周藤 悠介, 菅原 聡.  
English: Y. Takamura, T. Sakurai, R. Nakane, Y. Shuto, S. Sugahara.  
Language English 
Journal/Book name
Japanese: 
English:J. Appl. Phys. 
Volume, Number, Page Vol. 109    no. 7    pp. 07B768/1-3
Published date Apr. 2011 
Publisher
Japanese: 
English:American Institute of Physics 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
DOI https://doi.org/10.1063/1.3562042
Abstract The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the [001] direction with the in-plane epitaxial relation of CFG[100]kGOI[100], although the film slightly contained a non-epitaxial component. The strong (111) and (200) superlattice diffraction intensities indicated that the CFG film had a high degree of order for the L21 structure. Cross-sectional high-resolution transmission electron microscopy images of the film revealed that the film had dominant epitaxial and slight non-epitaxial components, which was consistent with the XRD measurements. The epitaxial component was grown directly on the buried oxide layer of the SOI substrate without formation of any interfacial layer.

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