Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices

Publication Information

Title

Japanese:
English:	Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices

Author

Japanese:	幸田みゆき, 川那子高暢, パールハットアヘメト, 名取研二, 服部健雄, 岩井洋.
English:	Miyuki Kouda, Takamasa Kawanago, Ahmet Parhat, KENJI NATORI, takeo hattori, HIROSHI IWAI.

Language

English

Journal/Book name

Japanese:
English:	Journal of Vacuum Science and Technology B

Volume, Number, Page

Vol. 29 No. 6 pp. 062202-1-4

Published date

Nov. 2011

Publisher

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English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: