Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Publication Information

Title

Japanese:
English:	Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Author

Language

English

Journal/Book name

Japanese:
English:	Solid-State Electronics

Volume, Number, Page

Vol. 68 pp. .68-72

Published date

Feb. 2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

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DOI