Effect of Postdeposition, Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors

Publication Information

Title

Japanese:
English:	Effect of Postdeposition, Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal-Oxide-Semiconductor Capacitors

Author

Japanese:	H.D. Trinh, Yueh-Chin Lin, H.C. Wang, C.H. Chang, 角嶋邦之, 岩井洋, 川那子高暢, Y.G. Lin, C.M. Chen, Y.Y.Wong, G.N. Huang, M. Hudait, E.Y. Chang.
English:	H.D. Trinh, Yueh-Chin Lin, H.C. Wang, C.H. Chang, Kuniyuki KAKUSHIMA, HIROSHI IWAI, Takamasa Kawanago, Y.G. Lin, C.M. Chen, Y.Y.Wong, G.N. Huang, M. Hudait, E.Y. Chang.

Language

English

Journal/Book name

Japanese:
English:	Applied Physics Express

Volume, Number, Page

Vol. 5 No. 2 pp. .021104-1-3

Published date

Feb. 2012

Publisher

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English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: