Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown

Publication Information

Title

Japanese:
English:	Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown

Author

Japanese:	Miranda Enrique, 川那子高暢, 角嶋邦之, J. Sune, 岩井洋.
English:	Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI.

Language

English

Journal/Book name

Japanese:
English:	Microelectronics Reliability

Volume, Number, Page

Vol. 52 pp. 1909-1912

Published date

2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI