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Title
Japanese: 
English:Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates 
Author
Japanese: L. De Los Santos Valladares, HurtadoSalinas DanielEduardo, Angel Bustamante, D. Acosta Najarro, S.I.Khondaker, T.Mitrelias, C.H.W.Barnes, J.Albino Aguiar, 真島 豊.  
English: L. De Los Santos Valladares, D. Hurtado Salinas, Angel Bustamante, D. Acosta Najarro, S.I.Khondaker, T.Mitrelias, C.H.W.Barnes, J.Albino Aguiar, Y.Majima.  
Language English 
Journal/Book name
Japanese: 
English:Thin Solid Films 
Volume, Number, Page Vol. 520        p. 6368-6374
Published date June 16, 2012 
Publisher
Japanese: 
English:Elsevier B.V. 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
DOI https://doi.org/10.1016/j.tsf.2012.06.043
Abstract In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO2/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu→Cu+Cu2O→Cu2O→Cu2O+ CuO→CuO was detected. Pure Cu2O films are obtained at 200 °C,whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improveswith annealing temperature. A resistivity phase diagram, which is obtainedfrom the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite sizewhen the temperature increases.

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