Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown

Publication Information

Title

Japanese:
English:	Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown

Author

Japanese:	E. Mranda, 川那子高暢, 角嶋邦之, J. Sune, 岩井洋.
English:	E. Mranda, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI.

Language

English

Journal/Book name

Japanese:
English:	[588] E. Miranda, T. Kawanago, K. Kakushima, J. Sune, H. Iwai, “Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown”, ESREF2012, October, 2012, Cagliari, Italy

Volume, Number, Page

Published date

2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:	ESREF2012

Conference site

Japanese:
English:	Cagliari