Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown

Publication Information

Title

Japanese:
English:	Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown

Author

Japanese:	Miranda Enrique, 川那子高暢, 角嶋邦之, J.Sune, 岩井洋.
English:	Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J.Sune, HIROSHI IWAI.

Language

English

Journal/Book name

Japanese:
English:	[Microelectronic Engineering

Volume, Number, Page

Vol. 109 pp. 322-325

Published date

Sept. 2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI