Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime

Publication Information

Title

Japanese:
English:	Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime

Author

Japanese:	Miranda Enrique, 川那子高暢, 角嶋邦之, J. Sune, 岩井洋.
English:	Miranda Enrique, Takamasa Kawanago, Kuniyuki KAKUSHIMA, J. Sune, HIROSHI IWAI.

Language

English

Journal/Book name

Japanese:
English:	IEEE ELECTRON DEVICE LETTERS

Volume, Number, Page

Vol. 34 No. 6 pp. 798-800

Published date

June 2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI