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Title
Japanese: 
English:Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers 
Author
Japanese: 山田 繁, 黒川 康良, 宮島 晋介, 小長井 誠.  
English: Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics 
Volume, Number, Page Vol. 52        pp. 04CR02
Published date Feb. 2013 
Publisher
Japanese: 
English:The Japan Society of Applied Physics 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL http://iopscience.iop.org/article/10.7567/JJAP.52.04CR02/meta
 
DOI https://doi.org/10.7567/JJAP.52.04CR02
Abstract We investigate the effects of a niobium-doped titanium dioxide (TiO2:Nb) diffusion barrier layer on the performance of silicon quantum dot superlattice (Si-QDSL) solar cells. The insertion of a 2-nm-thick TiO2:Nb layer significantly reduces phosphorus diffusion from a highly doped n-type layer into a Si-QDSL layer during thermal annealing at 900 °C. The phosphorous concentration in the Si-QDSL layer of the solar cell with the TiO2:Nb diffusion barrier layer was found to be less than 1018 cm-3, which is approximately two orders of magnitude lower than that of the solar cell without the diffusion barrier layer. The reduction in phosphorous concentration leads to the improvement of photo-generated carrier collection in the Si-QDSL layer. The short circuit current density of the solar cell with the diffusion barrier layer was dramatically improved to 1.6 mA/cm2 without the degradation of open circuit voltage and fill factor.

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