Design of low threshold GaN-based quantum well surface emitting laser

Publication Information

Title

Japanese:
English:	Design of low threshold GaN-based quantum well surface emitting laser

Author

Japanese:	A. Katsube, T. Honda, 坂口孝浩, 小山二三夫, 伊賀健一.
English:	A. Katsube, T. Honda, T. Sakaguchi, F. Koyama, K. Iga.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

p. 8

Published date

Sept. 1995

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Topical Workshop on III-V Nitrides(TWIII-VN)

Conference site

Japanese:
English:	Nagoya