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Title
Japanese: 
English:Solid-phase crystallization of amorphous silicon nanowire array and optical properties 
Author
Japanese: Ryousuke Ishikawa, Shinya Kato, 山崎 竜也, 黒川 康良, 宮島 晋介, 小長井 誠.  
English: Ryousuke Ishikawa, Shinya Kato, Tatsuya Yamazaki, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics 
Volume, Number, Page Vol. 53        pp. 02BE09
Published date Jan. 29, 2014 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL http://iopscience.iop.org/1347-4065/53/2S/02BE09
 
DOI https://doi.org/10.7567/JJAP.53.02BE09
Abstract An amorphous silicon nanowire (a-SiNW) array perpendicular to a glass substrate can be successfully obtained through the metal-assisted chemical etching of amorphous silicon (a-Si) thin films. The solid-phase crystallization of a-SiNWs was carried out by thermal annealing in a forming gas in the temperature range from 600 to 900 °C. The effects of hydrogen in the film and the film morphology on the crystallization of a-SiNWs were investigated by Raman spectroscopy and transmission electron microscopy. A higher hydrogen concentration of a-SiNWs reduced the crystallization temperature, as in a-Si thin films. It was also revealed that the large surface area of the a-SiNW array affected the crystallization process. We also studied the optical property of the fabricated SiNW array and demonstrated its high potential as an active layer in solar cells.

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