Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode

Publication Information

Title

Japanese:
English:	Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode

Author

Language

English

Journal/Book name

Japanese:
English:	K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan

Volume, Number, Page

Published date

2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The Workshop on Future Trend of Nanoelectronics:WIMNACT 39

Conference site

Japanese:
English: