Contact resistances depending on AlGaN layer thickness for AlGaN/GaN HEMT structures | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Contact resistances depending on AlGaN layer thickness for AlGaN/GaN HEMT structures

Author

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The Workshop on Future Trend of Nanoelectronics:WIMNACT

Conference site

Japanese:
English:

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