Design of tunnel FET based on Ge nanowires

Publication Information

Title

Japanese:
English:	Design of tunnel FET based on Ge nanowires

Author

Japanese:	SIMANULLANG MAROLOP, 宇佐美浩一, 小寺哲夫, 河野行雄, Banerjee Kaustav, 小田俊理.
English:	Marolop Simanullang, Kouichi Usami, Tetsuo Kodera, Yukio Kawano, Kaustav Banerjee, Shunri Oda.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Mar. 2014

Publisher

Japanese:
English:

Conference name

Japanese:	東京工業大学COI-Tプログラム平成25年度成果報告会
English:

Conference site

Japanese:	東京都
English: