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Title
Japanese: 
English:Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5/MgO/Si(100) tunnel contact 
Author
Japanese: 川目 悠, 悪七 泰樹, 高村 陽太, 周藤 悠介, 菅原 聡.  
English: Y. Kawame, T. Akushichi, Y. Takamura, Y. Shuto, S. Sugahara.  
Language English 
Journal/Book name
Japanese: 
English:J. Appl. Phys. 
Volume, Number, Page Vol. 117    No. 17    pp. 17D151/1-3
Published date Apr. 23, 2015 
Publisher
Japanese: 
English:AIP Publishing LLC 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
DOI https://doi.org/10.1063/1.4918567
Abstract We successfully fabricate a (100)-orientated B2-type-Co2FeSi0.5Al0.5 (CFSA)/MgO/Si(100) tunnel contact that is promising for an efficient spin injector for Si channels. The MgO barrier is formed by radical oxidation of an Mg thin film deposited on a Si(100) surface at room temperature and successive radical oxygen annealing at 400 °C. The CFSA electrode is grown on the MgO barrier at 400 °C by ultrahigh-vacuum molecular beam deposition, and it exhibits a (100)-orientated columnar polycrystalline structure with a high degree (63%) of B2-order. The MgO barrier near the interface of the CFSA/MgO junction is crystallized with the (100) orientation, i.e., the spin filter effect due to the MgO barrier could be expected for this junction. A three-terminal Si-channel spin-accumulation device with a CFSA/MgO/Si(100) spin injector is fabricated, and the Hanle effect of accumulated spin polarized electrons injected from this contact to the Si channel is observed.

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