A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface

Publication Information

Title

Japanese:	ショットキー及びヘテロシリサイド・シリコン接合トンネルFETのプロセス及び構造因子に関する研究
English:	A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface

Author

Japanese:	呉研.
English:	Wu Yan.

Type

Type:	Thesis (Ph.D.) Exam Summary
Country:	Japan

Language

English

Organization name

Tokyo Institute of Technology

Report number

甲第9534号

Conferred date

2014/03/26

Judge

File