Study on InGaAs surface control for realizing high quality InGaAs MOS interfaces | Science Tokyo Research Repository (T2R2)

Publication Information

Title

Japanese:	高品質InGaAs MOS界面形成のためのInGaAs表面制御についての研究
English:	Study on InGaAs surface control for realizing high quality InGaAs MOS interfaces

Author

Japanese:	星井拓也.
English:	Takuya Hoshii.

Type

Type:	Thesis (Ph.D.)
Country:	Japan

Language

Japanese

Organization name

The University of Tokyo

Report number

Conferred date

2011/03/24

Judge

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