抵抗変化型メモリ用Ta2O5薄膜の微構造が量子化伝導の発現に及ぼす影響

Publication Information

Title

Japanese:	抵抗変化型メモリ用Ta2O5薄膜の微構造が量子化伝導の発現に及ぼす影響
English:	Effect of microstructure on Conductance Quantization in Ta2O5 thin films for RRAM

Author

Japanese:	久保朋也, 白田稜, 南宏明, 塩田忠, 西山昭雄, 櫻井修, 篠崎和夫.
English:	Tomoya Kubo, Ryo Shirata, Hiroaki Minami, Tadashi SHIOTA, Akio Nishiyama, osamu sakurai, KAZUO SHINOZAKI.

Language

Japanese

Journal/Book name

Japanese:	日本セラミックス協会2016年年会講演予稿集
English:

Volume, Number, Page

Published date

Mar. 14, 2016

Publisher

Japanese:
English:

Conference name

Japanese:	日本セラミックス協会2016年年会
English:

Conference site

Japanese:	東京
English: