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Title
Japanese:Zn1-xMgxOバッファー層によるCu(In,Ga)S2薄膜太陽電池の変換効率改善 
English:Improvement of efficiency of Cu(In,Ga)S2 thin-film solar cells by Zn1-xMgxO buffer layer 
Author
Japanese: 廣井誉, 岩田恭彰, 杉本広紀, 山田明.  
English: Homare Hiroi, Yasuaki Iwata, Hiroki Sugimoto, Akira Yamada.  
Language Japanese 
Journal/Book name
Japanese: 
English: 
Volume, Number, Page        
Published date Mar. 19, 2016 
Publisher
Japanese:応用物理学会 
English:The Japan Society of Applied Physics 
Conference name
Japanese:第63回応用物理学会春季学術講演会 
English:The 63rd JSAP Spring Meeting, 2016 
Conference site
Japanese:東京 
English:Tokyo 
Official URL https://confit.atlas.jp/guide/event/jsap2016s/subject/19p-W541-6/date?cryptoId=
 
Abstract Se-free Cu(In,Ga)S2 is a promising material for solar cells from an aspect of low-cost production because H2Se which is an expensive material can be removable. However, there is no remarkable progress in the field of Se-free Cu(In,Ga)S2 solar cells these days. Additionally, Se-free Cu(In,Ga)S2 solar cells have further two difficulties in mass-production. The one is KCN-etching process for absorbers and the other is CdS deposition for buffer layers. Based on these backgrounds, we tried fabricating Se-free Cu(In,Ga)S2 solar cells via KCN-free and Cd-free processes. As a result, the high performance was achieved on Se-free Cu(In,Ga)S2 solar cells. In this paper, we focused on the Cd-free buffer layer by using Zn1-xMgxO, and revealed the dependence of electrical parameters on Mg content of Zn1-xMgxO buffer layer for Se-free Cu(In,Ga)S2 solar cells. Furthermore, the latest result of our research on Se-free Cu(In,Ga)S2 solar cells will be shown at the conference.
Award Young Scientist Presentation Award

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